Article | Proceedings of the 10<sup>th</sup> International Modelica Conference; March 10-12; 2014; Lund; Sweden | Behavioral Modeling of Power Semiconductors in Modelica Linköping University Electronic Press Conference Proceedings
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Title:
Behavioral Modeling of Power Semiconductors in Modelica
Author:
Patrick Denz: Vorarlberg University of Appl. Sc., Dornbirn/Austria Thomas Schmitt: Modelon GmbH, Munich, Germany Markus Andres: Modelon GmbH, Munich, Germany
DOI:
10.3384/ecp14096343
Download:
Full text (pdf)
Year:
2014
Conference:
Proceedings of the 10th International Modelica Conference; March 10-12; 2014; Lund; Sweden
Issue:
096
Article no.:
036
Pages:
343-352
No. of pages:
10
Publication type:
Abstract and Fulltext
Published:
2014-03-10
ISBN:
978-91-7519-380-9
Series:
Linköping Electronic Conference Proceedings
ISSN (print):
1650-3686
ISSN (online):
1650-3740
Publisher:
Linköping University Electronic Press; Linköpings universitet

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This paper introduces behavioral (macro) models of power semiconductors; i.e. diodes; MOSFETs and IGBTs; being part of a library for simulating power electronics utilized; e.g. in electrified powertrains of either hybrid electric vehicles (HEV) or purely battery electric vehicles (BEV). The models consider static; dynamic (switching mode) and thermal effects and in most cases can be fully parameterized solely on the basis of characteristic curves and parameters specified in datasheets. The main purpose of behavioral models is an accurate representation of the semiconductor signals to; e.g. calculate the overall losses. The MOSFET models are verified in simulations with various test circuits and are validated with measurement data provided by a company developing electric drive systems. Furthermore; the arising numerical problems are discussed and possible solutions are provided on how to modify the models in order to use them in e.g. system simulation.

Keywords: Power electronics; power semiconductors; macro modeling; behavioral modeling; numerical performance

Proceedings of the 10th International Modelica Conference; March 10-12; 2014; Lund; Sweden

Author:
Patrick Denz, Thomas Schmitt, Markus Andres
Title:
Behavioral Modeling of Power Semiconductors in Modelica
DOI:
http://dx.doi.org/10.3384/ecp14096343
References:

[1] Infineon Technologies AG. Automotive IGBT Module - Explanation of Technical Information. 2010.

[2] Francois E. Cellier and Ernesto Kofman. Continuous System Simulation. Springer, 2006.

[3] Alan Courtay. MAST Power Diode and Thyristor Models Including Automatic Parameter Extraction. CERN, European Laboratory for Particle Physics. Geneva, Switzerland, 1995.

[4] Bayerer Reinhold Heer, Daniel and Thomas Schütze. Trench Field-Stop IGBT3 Turn-Off. Infineon Technologies AG,Warstein, Germany, 2012.

[5] Josef Lutz. Halbleiter-Leistungsbauelemente: Physik, Eigenschaften, Zuverlässigkeit. Springer, 1st edition, 2006.

[6] Martin Otter, Hilding Elmqvist, and Sven Erik Mattsson. Modeling of mixed Continous/Discrete Systems in Modelica. 1999.

[7] Frank Pfirsch and Reinhold Bayerer. MOSgesteuerte Leistungsschalter: Konzepte und Schaltverhalten. VDE-Verlag, Bauelemente der Leistungselektronik und ihre Anwendungen, ETG-Fachtagung, 2006.

[8] Arendt Wintrich. Verhaltensmodellierung von Leistungshalbleitern für den rechnergestützten Entwurf leistungselektronischer Schaltungen. PhD thesis, Technische Universität Chemnitz, 1996.

[9] Arendt Wintrich, Ulrich Nicolai, Werner Tursky, and Tobias Reimann. Applikationshandbuch Leistungshalbleiter. ISLE, Ilmenau, 2010.

Proceedings of the 10th International Modelica Conference; March 10-12; 2014; Lund; Sweden

Author:
Patrick Denz, Thomas Schmitt, Markus Andres
Title:
Behavioral Modeling of Power Semiconductors in Modelica
DOI:
https://doi.org10.3384/ecp14096343
Note: the following are taken directly from CrossRef
Citations:
  • Marek Turzynsk & Wlodek J. Kulesza (2016). A Simplified Behavioral MOSFET Model Based on Parameters Extraction for Circuit Simulations. IEEE Transactions on Power Electronics, 31(4): 3096. DOI: 10.1109/TPEL.2015.2445375
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