Konferensartikel

An 1 GHz Class E LDMOS Power Amplifier

Andreas Ådahl
Microwave Electronics Laboratory, Chalmers University of Technology, Sweden

Herbert Zirath
Microwave Electronics Laboratory, Chalmers University of Technology, Sweden

Ladda ner artikelhttp://www.ep.liu.se/ecp_article/index.en.aspx?issue=008;article=003

Ingår i: GigaHertz 2003. Proceedings from the Seventh Symposium

Linköping Electronic Conference Proceedings 8:3, s.

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Publicerad: 2003-11-06

ISBN:

ISSN: 1650-3686 (tryckt), 1650-3740 (online)

Abstract

A class E power amplifier working at 1 GHz and with an LDMOS transistor as switching element has been developed. The circuit was implemented with lumped and distributed elements. An output power of 7.9 W at 73 % drain efficiency with a gain of 12.5 dB was obtained at 1 GHz. Both simulations and measurements of the amplifier are presented within this paper. This result represents state of the art in output power and efficiency with a class E amplifier at this frequency.

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Referenser

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