Nickolai I. Klyui
V. Lashkarev Institute of Semiconductor Physics National Academy of Sciences of Ukraine, Kiev, Ukraine
Anatoliy N. Lukyanov
V. Lashkarev Institute of Semiconductor Physics National Academy of Sciences of Ukraine, Kiev, Ukraine
Anatoliy V. Makarov
V. Lashkarev Institute of Semiconductor Physics National Academy of Sciences of Ukraine, Kiev, Ukraine
Volodymyr B. Lozinskii
V. Lashkarev Institute of Semiconductor Physics National Academy of Sciences of Ukraine, Kiev, Ukraine
Gennadiy S. Khrypunov
Kharkiv Polytechnic Institute, National Technical University, Kharkiv, Ukraine
Andriy N. Klyui
Taras Shevchenko Kyiv National University, Kiev, Kiev, Ukraine
Download articlehttp://dx.doi.org/10.3384/ecp110572787Published in: World Renewable Energy Congress - Sweden; 8-13 May; 2011; Linköping; Sweden
Linköping Electronic Conference Proceedings 57:13, p. 2787-2794
Published: 2011-11-03
ISBN: 978-91-7393-070-3
ISSN: 1650-3686 (print), 1650-3740 (online)
Diamond-like carbon films (DLC) deposited by PE-CVD technique were used as antireflection and protective coatings for Si and AIIBVI based solar cells (SC). Application of the DLC films as single- or doublelayer antireflection coatings allows us to improve the Si-based solar cells efficiency up to 1.4-1.5 times (from ~10% to ~15%). It has been shown that optical bandgaps of DLC films were increased after UV irradiation. The films with greater amount of nitrogen show better irradiation resistance. It was also established that Si (both mono- and multicrystalline) and AIIBVI based SCs with even thin antireflection DLC film demonstrate higher stability against action of gamma-irradiation up to dose of 108 rad. The effect is connected with hydrogen atoms those are released from the film as a result of broken of carbon-hydrogen bonds by ?- or UV-quanta; diffuse to the SC; and passivate dangling bonds in the SC volume. It has been also shown that due to application of the DLC antireflection films with low refractive index the transparency of front ITO or ZnO (Al) contacts in AIIBVI based SCs may be substantially improved integrally to 10% in spectral range of 430-850 nm. As a result; short circuit current and efficiency of thin film SCs may be also improved.