Mattias Ingvarson
Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden
Arne Øistein Olsen
Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden
Erik Kollberg
Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden
Jan Stake
Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden
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Published in: GigaHertz 2003. Proceedings from the Seventh Symposium
Linköping Electronic Conference Proceedings 8:18, p.
Published: 2003-11-06
ISBN:
ISSN: 1650-3686 (print), 1650-3740 (online)
A fixed tuned tripler and a quintupler using the Heterostructure Barrier Varactor (HBV) diode are presented. The tripler utilise a novel arrangement of antipodal finline; for waveguide to microstrip transition; and microstrip elements for the diode matching. An output power of -0.8 dBm at 128 GHz was measured for the tripler; which is close to the simulated performance. For the quintupler; an output power of 5.6 dBm at 98 GHz is predicted when ideal circuit elements are used.
