Erik Danielsson
Department of Microelectronics and Information Technology, KTH, Sweden
Carl-Mikael Zetterling
Department of Microelectronics and Information Technology, KTH, Sweden
Mikael Östling
Department of Microelectronics and Information Technology, KTH, Sweden
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Published in: GigaHertz 2003. Proceedings from the Seventh Symposium
Linköping Electronic Conference Proceedings 8:38, p.
Published: 2003-11-06
ISBN:
ISSN: 1650-3686 (print), 1650-3740 (online)
An optimization of a SiC bipolar high frequency transistor with a regrown extrinsic base is presented. The structure for device simulations was created with process simulations; and investigated the influence of graded base doping; emitter design and an uncovering step after the regrowth. A maximum fMAX of 40 GHz was achieved for the graded base with an isolating uncovering step. The input and output impedances of this transistor are also studied with respect to 30 W operation over a 50 O load.
