Johan Ankarcrona
Uppsala University, The Ångström Laboratory, Solid State Electronics, Uppsala, Sweden
Klas-Håkan Eklund
Uppsala University, The Ångström Laboratory, Solid State Electronics, Uppsala, Sweden
Lars Vestling
Uppsala University, The Ångström Laboratory, Solid State Electronics, Uppsala, Sweden
Jörgen Olsson
Uppsala University, The Ångström Laboratory, Solid State Electronics, Uppsala, Sweden
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Published in: GigaHertz 2003. Proceedings from the Seventh Symposium
Linköping Electronic Conference Proceedings 8:59, p.
Published: 2003-11-06
ISBN:
ISSN: 1650-3686 (print), 1650-3740 (online)
High frequency substrate losses for RF LDMOS are analyzed using numerical device simulation. An equivalent circuit model is developed which accurately describes the off-state losses. Based on the simulation and model significant improvements in terms of output resistance are demonstrated; using an optimized device on high resistivity substrate. This is very important in terms of efficiency for RF amplifiers.
