Niklas Wadefalk
California Institute of Technology, Electrical Engineering Dept, USA
Anders Mellberg
Chalmers University of Technology, Dept of Microelectronics, Sweden
Iltcho Angelov
Chalmers University of Technology, Dept of Microelectronics, Sweden
Emmanuil Choumas
Unaxis Trading AG, Truebbach, Switzerland
Erik Kollberg
Chalmers University of Technology, Dept of Microelectronics, Sweden
Niklas Rorsman
Chalmers University of Technology, Dept of Microelectronics, Sweden
Piotr Starski
Chalmers University of Technology, Dept of Microelectronics, Sweden
Jörgen Stenarson
Chalmers University of Technology, Dept of Microelectronics, Sweden
Herbert Zirath
Chalmers University of Technology, Dept of Microelectronics, Sweden
Download article
Published in: GigaHertz 2003. Proceedings from the Seventh Symposium
Linköping Electronic Conference Proceedings 8:8, p.
Published: 2003-11-06
ISBN:
ISSN: 1650-3686 (print), 1650-3740 (online)
This paper describes cryogenic broadband amplifier with very low noise for the frequency band 1.5-4.5 GHz. At 15 K the two-stage InP-based amplifier has a gain of 28+/-2 dB dB and a noise temperature below 5 K. For a narrower band of 2-4 GHz at 15 K the measured gain is 30.0+/-0.8 dB and noise temperature is 1.5 K. The total DC power consumption of the amplifier is 6.8 mW.
