A. Deleniv
Department of Microtechnology and Nanoscience MC-2, Chalmers University of Technology, Sweden
S. Abadei
Department of Microtechnology and Nanoscience MC-2, Chalmers University of Technology, Sweden
S. Gevorgian
Department of Microtechnology and Nanoscience MC-2, Chalmers University of Technology, Sweden \ Microwave and High Speed Research Center, Ericsson Microwave Systems, Sweden
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Published in: GigaHertz 2003. Proceedings from the Seventh Symposium
Linköping Electronic Conference Proceedings 8:70, p.
Published: 2003-11-06
ISBN:
ISSN: 1650-3686 (print), 1650-3740 (online)
A simple technique for characterization of dielectrics at high microwave frequencies is presented and demonstrated. The technique makes use of the measured impedance of a test structure. The latter is a simple capacitor; formed on the top of a substrate with an arbitrary number of dielectric/conductor layers and contains a material under test (MUT) layer with unknown loss tangent and dielectric constant. Assuming that all other layers are specified; a simple method is given to calculate RF impedance of such a structure enabling extraction of MUT properties.
