Patrick Denz
Vorarlberg University of Appl. Sc., Dornbirn/Austria
Thomas Schmitt
Modelon GmbH, Munich, Germany
Markus Andres
Modelon GmbH, Munich, Germany
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http://dx.doi.org/10.3384/ecp14096343Published in: Proceedings of the 10th International Modelica Conference; March 10-12; 2014; Lund; Sweden
Linköping Electronic Conference Proceedings 96:36, p. 343-352
Published: 2014-03-10
ISBN: 978-91-7519-380-9
ISSN: 1650-3686 (print), 1650-3740 (online)
This paper introduces behavioral (macro) models of power semiconductors; i.e. diodes; MOSFETs and IGBTs; being part of a library for simulating power electronics utilized; e.g. in electrified powertrains of either hybrid electric vehicles (HEV) or purely battery electric vehicles (BEV). The models consider static; dynamic (switching mode) and thermal effects and in most cases can be fully parameterized solely on the basis of characteristic curves and parameters specified in datasheets. The main purpose of behavioral models is an accurate representation of the semiconductor signals to; e.g. calculate the overall losses. The MOSFET models are verified in simulations with various test circuits and are validated with measurement data provided by a company developing electric drive systems. Furthermore; the arising numerical problems are discussed and possible solutions are provided on how to modify the models in order to use them in e.g. system simulation.
Power electronics; power semiconductors; macro modeling; behavioral modeling; numerical performance
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