Konferensartikel

Characterisation of Metamorphic HEMTs for low-noise wideband amplifiers

Karine Enze
Chalmers University of Technology, Microwave Electronics Laboratory, Sweden

Jan Grahn
Chalmers University of Technology, Microwave Electronics Laboratory, Sweden

Anders Mellberg
Chalmers University of Technology, Microwave Electronics Laboratory, Sweden

Herbert Zirath
Chalmers University of Technology, Microwave Electronics Laboratory, Sweden

Niklas Rorsman
Chalmers University of Technology, Microwave Electronics Laboratory, Sweden

Ladda ner artikelhttp://www.ep.liu.se/ecp_article/index.en.aspx?issue=008;article=062

Ingår i: GigaHertz 2003. Proceedings from the Seventh Symposium

Linköping Electronic Conference Proceedings 8:62, s.

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Publicerad: 2003-11-06

ISBN:

ISSN: 1650-3686 (tryckt), 1650-3740 (online)

Abstract

Metamorphic HEMTs developed by OMMIC have been DC- and RF-characterized. An extrinsic DC transconductance of 770 mS/mm was obtained for a 4x25µm MHEMT. Typical extrinsic unity current cut-off frequency; fT; was 140 GHz with a maximum oscillation frequency of 196 GHz. Broadband three-stage amplifiers utilizing these transistors were designed fabricated and characterized for various frequency bandwidths up to 90 GHz. For the 26-43 GHz bandwidth; the amplifier exhibited a gain of typically 25 dB and a return loss less than 5 db.

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Referenser

[1] OMMIC homepage http://www.ommic.com

[2] Peter H Ladbroke;’MMIC Design:GaAs FETs and HEMTs’; ISBN 0-89006-314-1; Artech House; 1989.

[3] N Ono; K Onodera; K Arai; K Yamaguchi; Y Iseki;’K-band Monolithic GaAs HEMT Driver Amplifiers’; Proceedings of 2002 Asia Pacific Microwave Conference; pp. 1390-1392.

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