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Heterostructure barrier varactor frequency triplers and quintuplers for THz electronics

Mattias Ingvarson
Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden

Arne Øistein Olsen
Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden

Erik Kollberg
Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden

Jan Stake
Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden

Ladda ner artikelhttp://www.ep.liu.se/ecp_article/index.en.aspx?issue=008;article=018

Ingår i: GigaHertz 2003. Proceedings from the Seventh Symposium

Linköping Electronic Conference Proceedings 8:18, s.

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Publicerad: 2003-11-06

ISBN:

ISSN: 1650-3686 (tryckt), 1650-3740 (online)

Abstract

A fixed tuned tripler and a quintupler using the Heterostructure Barrier Varactor (HBV) diode are presented. The tripler utilise a novel arrangement of antipodal finline; for waveguide to microstrip transition; and microstrip elements for the diode matching. An output power of -0.8 dBm at 128 GHz was measured for the tripler; which is close to the simulated performance. For the quintupler; an output power of 5.6 dBm at 98 GHz is predicted when ideal circuit elements are used.

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Referenser

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