Design and characterization of a broadband SiC power amplifier

R. Jonsson
Swedish Defence Research Agency (FOI), Sweden \ Department of Physics, Linköping University, Sweden

S. Rudner
Swedish Defence Research Agency (FOI), Sweden \ Department of Physics, Linköping University, Sweden

C. Harris
Advanced Microwave Device Solutions AB, Sweden

A. Konstantinov
Advanced Microwave Device Solutions AB, Sweden

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Ingår i: GigaHertz 2003. Proceedings from the Seventh Symposium

Linköping Electronic Conference Proceedings 8:33, s.

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Publicerad: 2003-11-06


ISSN: 1650-3686 (tryckt), 1650-3740 (online)


Due to the proximity of military and civilian bands at the relevant frequencies low frequency radar and EW systems needs amplifiers which combine a broadband coverage; a high output power and efficiency with a good linearity. The wide bandgap semiconductors SiC and GaN offer an impressive RF and microwave power-frequency capability [1] but relatively few SiC transistor amplifiers have been designed for frequencies below 500 MHz. Recently; however; F Villard et al. described a SiC MESFET with an output power of 37;5 W; a gain of 8 dB; an efficiency in class AA-B of 55% at 500MHz [2]. The IMD3 level with 10-dB back-off from the 1 dB compression point and a 1 MHz frequency offset between tones was – 35dB. Using 10W Lateral Epitaxy SiC MESFET power transistors fabricated at AMDS AB we have done a preliminary design and characterization of a wideband 100 – 500 MHz SiC-based power amplifier. The amplifier is designed for a broadband multifunction EW system.


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2. F.Villard; J.-P.Prigent; E.Morvan; C.Dua; C.Brylinski; T.Temcamini and P.Pouvil; IEEE Trans MTT; Vol. 51; pp1129- 1134 (2003)

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4. N. Sghaier; G.M. Bluet; A. Souifi; G. Guillot; E. Morvan and C. Brylinski; IEEE Transactions on ED; vol. 50 (2) p. 297-302 (2003)

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