Konferensartikel

Due to the proximity of military and civilian bands at the relevant frequencies low frequency radar and EW systems needs amplifiers which combine a broadband coverage; a high output power and efficiency with a good linearity. The wide bandgap semiconductors SiC and GaN offer an impressive RF and microwave power-frequency capability [1] but relatively few SiC transistor amplifiers have been designed for frequencies below 500 MHz. Recently; however; F Villard et al. described a SiC MESFET with an output power of 37;5 W; a gain of 8 dB; an efficiency in class AA-B of 55% at 500MHz [2]. The IMD3 level with 10-dB back-off from the 1 dB compression point and a 1 MHz frequency offset between tones was – 35dB. Using 10W Lateral Epitaxy SiC MESFET power transistors fabricated at AMDS AB we have done a preliminary design and characterization of a wideband 100 – 500 MHz SiC-based power amplifier. The amplifier is designed for a broadband multifunction EW system.

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1. R.C.Clarke and J.W.Palmour; Proceedings of the IEEE; Vol. 90; pp987-992 (2002)

2. F.Villard; J.-P.Prigent; E.Morvan; C.Dua; C.Brylinski; T.Temcamini and P.Pouvil; IEEE Trans MTT; Vol. 51; pp1129- 1134 (2003)

3. A.O. Konstantinov; A.M. Saroukhan; S. Karlsson; C.I.Harris and A. Litwin MRS Symp. Proc. Vol. 640 (2001) p.H4.6.1-H4.6.5.

4. N. Sghaier; G.M. Bluet; A. Souifi; G. Guillot; E. Morvan and C. Brylinski; IEEE Transactions on ED; vol. 50 (2) p. 297-302 (2003)