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4H-SiC MOSFETs with N<sub>2</sub>O Grown Gate Oxid

Gudjón Gudjónsson
Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden

Halldór ö. Ólafsson
Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden

Per-åke Nilsson
Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden

Einar ö. Sveinbjörnsson
Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden

Herbert Zirath
Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden

Ladda ner artikelhttp://www.ep.liu.se/ecp_article/index.en.aspx?issue=008;article=036

Ingår i: GigaHertz 2003. Proceedings from the Seventh Symposium

Linköping Electronic Conference Proceedings 8:36, s.

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Publicerad: 2003-11-06

ISBN:

ISSN: 1650-3686 (tryckt), 1650-3740 (online)

Abstract

We report on processing and characterization of lateral n-channel 4H-SiC MOSFETs. We find that growing the gate oxide in nitrous oxide (N2O) ambient results in a significant enhancement of the electron inversion channel mobility. The peak field effect mobility varies between 30 and 90 cm2/Vs in these normally off devices while transistors with a conventional wet or dry gate oxide exhibit mobilities ranging between 1-10 cm2/Vs. The mobility enhancement is correlated with a significant reduction of the density of shallow interface states with energies close to the SiC conduction band edge. This is revealed from capacitancevoltage (C-V) data and thermally stimulated current measurements (TSC). Furthermore; we find that the ohmic contact annealing results in an increase in the density of interface states which most likely results in a reduction of the inversion channel mobility.

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Referenser

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