Konferensartikel

A high frequency SiC bipolar transistor design optimization using process and device simulations

Erik Danielsson
Department of Microelectronics and Information Technology, KTH, Sweden

Carl-Mikael Zetterling
Department of Microelectronics and Information Technology, KTH, Sweden

Mikael Östling
Department of Microelectronics and Information Technology, KTH, Sweden

Ladda ner artikelhttp://www.ep.liu.se/ecp_article/index.en.aspx?issue=008;article=038

Ingår i: GigaHertz 2003. Proceedings from the Seventh Symposium

Linköping Electronic Conference Proceedings 8:38, s.

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Publicerad: 2003-11-06

ISBN:

ISSN: 1650-3686 (tryckt), 1650-3740 (online)

Abstract

An optimization of a SiC bipolar high frequency transistor with a regrown extrinsic base is presented. The structure for device simulations was created with process simulations; and investigated the influence of graded base doping; emitter design and an uncovering step after the regrowth. A maximum fMAX of 40 GHz was achieved for the graded base with an isolating uncovering step. The input and output impedances of this transistor are also studied with respect to 30 W operation over a 50 O load.

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Referenser

[1] A. Agarwal et al.: Mat. Res. Soc. Symp. Proc. 742 (2003); p. K7.3.1

[2] E. Danielsson; S.-K. Lee; C.-M. Zetterling and M. Östling: J. Electron. Mater. 30 (2001); p. 247

[3] M. Bakowski; U. Gustavsson and U. Lindefelt: Phys. stat. sol. (a) 162 (1997); p. 421

[4] U. Lindefelt: J. Appl. Phys. 84 (1998); p. 2628

[5] S. M. Sze: Modern semiconductor device physics (John Wiley & Sons; New York 1998).

[6] S. M. Sze: Physics of Semiconductor Devices (John Wiley & Sons; New York 1981).

[7] E. Danielsson; C.-M. Zetterling; M. Domeij; M. Östling; U. Forsberg and E. Janzén: Solid- State Electron. 47 (2003); p. 639

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