Konferensartikel

A comparison of topology and technology of balanced VCOs intended for use in a 60 GHz WLAN system

Mattias Ferndahl
Chalmers University of Tech., Microwave Electronics, Sweden

Herbert Zirath
Chalmers University of Tech., Microwave Electronics, Sweden \ Ericsson AB Microwave and High Speed Electronics Center, Sweden

Ladda ner artikelhttp://www.ep.liu.se/ecp_article/index.en.aspx?issue=008;article=052

Ingår i: GigaHertz 2003. Proceedings from the Seventh Symposium

Linköping Electronic Conference Proceedings 8:52, s.

Visa mer +

Publicerad: 2003-11-06

ISBN:

ISSN: 1650-3686 (tryckt), 1650-3740 (online)

Abstract

We present a comparison of balanced Colpitt and Negative gm oscillators in a GaAs pHEMT process as well as comparison with similar designs in a SiGe BiCMOS process. We believe that this comparison will give more insight into drawbacks and advantages of the two topologies and topologies. The comparison between GaAs pHEMT versus SiGe HBTs show that pHEMT oscillators also are capable of producing low phase noise comparable with SiGe HBT oscillators. All oscillators are fully integrated with on-chip resonators and have mainly been designed with focus on low phase noise.

Nyckelord

Inga nyckelord är tillgängliga

Referenser

[1] H. Zirath; C. Fager; M. Garcia; P. Sakalas; L. Landen; A. Alping; ” Analog MMICs for Millimeter-Wave Applications Based on a Commercial 0.14-um pHEMT Technology” IEEE-MTT Trans on Microwave Theory and Tech.; vol. 49; no.11 pp 2086-2092; 2001

[2] H. Baudry; et al.; "High performance 0.25um SiGe and SiGe:C HBTs using non selective epitaxy;" Proc. of the IEEE BCTM 2001; pp.52-55; October 2001.

[3] P. Kinget; “Integrated GHz voltage controlled oscillators;” in Analog Circuit Design: (X)DSL and Other Communication Systems; RF MOST Models; Integrated Filters and Oscillators; W. Sansen; J.Huijsing; and R. van de Plassche; Eds. Boston; MA: Kluwer; pp. 353–381;1999.

[4] B. Piernas; K. Nisihikawa; T. Nakagawa; K. Araki; ”A Compact and Low-Phase-Noise Ka-Band pHEMT-Based VCO”; IEEE Trans. Microwave Theory and Tech.; Vol. 51; No. 3; pp 778- 782; March 2003.

[5] Plouchart; J.-O. Ainspan; H. Soyuer; M. Ruehli; A.; “A fullymonolithic SiGe differential voltage-controlled oscillator for 5 GHz wireless applications”; IEEE-RFIC 2000; Radio Frequency Integrated Circuits Symp.; pp. 65-68; 2000.

[6] X. Zhang; D. Sturzebecher; A. S. Daryoush; “Comparison of Phase Noise Performance of HEMT and HBT based Oscillators”; IEEE-MTT-S 1995; Microwave and Tech. And Theory Symp.; pp 697-700; 1995

[7] D. Wang; X. Wang; “The Performance Comparison of CMOS Vs Bipolar VCO In SiGe BiCMOS technology”; IEEE-RFIC 2003; Radio Frequency Integrated Circuits Symp.; pp 615-618; 2003

Citeringar i Crossref