A comparison of topology and technology of balanced VCOs intended for use in a 60 GHz WLAN system

Mattias Ferndahl
Chalmers University of Tech., Microwave Electronics, Sweden

Herbert Zirath
Chalmers University of Tech., Microwave Electronics, Sweden \ Ericsson AB Microwave and High Speed Electronics Center, Sweden

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Ingår i: GigaHertz 2003. Proceedings from the Seventh Symposium

Linköping Electronic Conference Proceedings 8:52, s.

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Publicerad: 2003-11-06


ISSN: 1650-3686 (tryckt), 1650-3740 (online)


We present a comparison of balanced Colpitt and Negative gm oscillators in a GaAs pHEMT process as well as comparison with similar designs in a SiGe BiCMOS process. We believe that this comparison will give more insight into drawbacks and advantages of the two topologies and topologies. The comparison between GaAs pHEMT versus SiGe HBTs show that pHEMT oscillators also are capable of producing low phase noise comparable with SiGe HBT oscillators. All oscillators are fully integrated with on-chip resonators and have mainly been designed with focus on low phase noise.


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