Konferensartikel

Simulation and modeling of the substrate influence on the high frequency performance for RF LDMOS

Johan Ankarcrona
Uppsala University, The Ångström Laboratory, Solid State Electronics, Uppsala, Sweden

Klas-Håkan Eklund
Uppsala University, The Ångström Laboratory, Solid State Electronics, Uppsala, Sweden

Lars Vestling
Uppsala University, The Ångström Laboratory, Solid State Electronics, Uppsala, Sweden

Jörgen Olsson
Uppsala University, The Ångström Laboratory, Solid State Electronics, Uppsala, Sweden

Ladda ner artikelhttp://www.ep.liu.se/ecp_article/index.en.aspx?issue=008;article=059

Ingår i: GigaHertz 2003. Proceedings from the Seventh Symposium

Linköping Electronic Conference Proceedings 8:59, s.

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Publicerad: 2003-11-06

ISBN:

ISSN: 1650-3686 (tryckt), 1650-3740 (online)

Abstract

High frequency substrate losses for RF LDMOS are analyzed using numerical device simulation. An equivalent circuit model is developed which accurately describes the off-state losses. Based on the simulation and model significant improvements in terms of output resistance are demonstrated; using an optimized device on high resistivity substrate. This is very important in terms of efficiency for RF amplifiers.

Nyckelord

Component; substrate losses; modeling; LDMOS

Referenser

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