Konferensartikel

Microwave Characterization of Thin Ferroelectric Films

A. Deleniv
Department of Microtechnology and Nanoscience MC-2, Chalmers University of Technology, Sweden

S. Abadei
Department of Microtechnology and Nanoscience MC-2, Chalmers University of Technology, Sweden

S. Gevorgian
Department of Microtechnology and Nanoscience MC-2, Chalmers University of Technology, Sweden \ Microwave and High Speed Research Center, Ericsson Microwave Systems, Sweden

Ladda ner artikelhttp://www.ep.liu.se/ecp_article/index.en.aspx?issue=008;article=070

Ingår i: GigaHertz 2003. Proceedings from the Seventh Symposium

Linköping Electronic Conference Proceedings 8:70, s.

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Publicerad: 2003-11-06

ISBN:

ISSN: 1650-3686 (tryckt), 1650-3740 (online)

Abstract

A simple technique for characterization of dielectrics at high microwave frequencies is presented and demonstrated. The technique makes use of the measured impedance of a test structure. The latter is a simple capacitor; formed on the top of a substrate with an arbitrary number of dielectric/conductor layers and contains a material under test (MUT) layer with unknown loss tangent and dielectric constant. Assuming that all other layers are specified; a simple method is given to calculate RF impedance of such a structure enabling extraction of MUT properties.

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Referenser

[1] Z. Ma; Andrew J. Becker; P.Polakos; H. Huggins; J. Pastalan; Hui Wu; K.Watts; Y.H.Wong; and P. Mankiewich; “RF Measurement” Technique for Characterizing Thin Films”; IEEE Trans. Electron. Devices.

[2] Roger F. Harrington; “Time-Harmonic Electromagnetic Fields”; McGraw-Hill; Inc.; 1961.

[3] Kiyomichi Araki and Tatsuo Itoh; “Hankel Transform Domain Analysis of Open Circular Microstrip Radiating Structures”; IEEE Trans. Antenna and Prop.; Vol.AP-29;pp.84-89.

[4] S. Gevorgian; “Surface Impedance of Silicon Substrates and Films”; Int. J. RF and Microwave CAE; 1998; pp.433-439.

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