Konferensartikel

Implementation of MSM-detectors in a commercial GaAs PHEMT process

Magnus Andersson
Microwave Electronics Lab., Dept of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden

Lars Dillner
Zarlink Semiconductor AB, Sweden

Herbert Zirath
Microwave Electronics Lab., Dept of Microtechnology and Nanoscience, Chalmers University of Technology, Sweden

Ladda ner artikelhttp://www.ep.liu.se/ecp_article/index.en.aspx?issue=008;article=078

Ingår i: GigaHertz 2003. Proceedings from the Seventh Symposium

Linköping Electronic Conference Proceedings 8:78, s.

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Publicerad: 2003-11-06

ISBN:

ISSN: 1650-3686 (tryckt), 1650-3740 (online)

Abstract

The integration of an optical detector with a transimpedance amplifier (TIA) is a very attractive solution for high speed fiber optical communication links. This article presents our studies of the possibility of integrating a Metal-Semiconductor-Metal (MSM) detector on the same material structure as used for commercial HEMT-MMICs. Future applications such as 10 Gb/s fiber optical links are investigated. The first generation MSM detectors were fabricated for proof-of-concept. The DC and RF responsitivity at 850 nm wavelength was measured as a function of bias-voltage. A DCresponsitivity of approximately 0.5 A/W and a bandwidth above 2 GHz was achieved for an applied voltage of 10 V. An electrical model was extracted from S-parameter and DC-measurements.

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Referenser

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