Konferensartikel

Cryogenic 1.5-4.5 GHz ultra low noise amplifier

Niklas Wadefalk
California Institute of Technology, Electrical Engineering Dept, USA

Anders Mellberg
Chalmers University of Technology, Dept of Microelectronics, Sweden

Iltcho Angelov
Chalmers University of Technology, Dept of Microelectronics, Sweden

Emmanuil Choumas
Unaxis Trading AG, Truebbach, Switzerland

Erik Kollberg
Chalmers University of Technology, Dept of Microelectronics, Sweden

Niklas Rorsman
Chalmers University of Technology, Dept of Microelectronics, Sweden

Piotr Starski
Chalmers University of Technology, Dept of Microelectronics, Sweden

Jörgen Stenarson
Chalmers University of Technology, Dept of Microelectronics, Sweden

Herbert Zirath
Chalmers University of Technology, Dept of Microelectronics, Sweden

Ladda ner artikelhttp://www.ep.liu.se/ecp_article/index.en.aspx?issue=008;article=008

Ingår i: GigaHertz 2003. Proceedings from the Seventh Symposium

Linköping Electronic Conference Proceedings 8:8, s.

Visa mer +

Publicerad: 2003-11-06

ISBN:

ISSN: 1650-3686 (tryckt), 1650-3740 (online)

Abstract

This paper describes cryogenic broadband amplifier with very low noise for the frequency band 1.5-4.5 GHz. At 15 K the two-stage InP-based amplifier has a gain of 28+/-2 dB dB and a noise temperature below 5 K. For a narrower band of 2-4 GHz at 15 K the measured gain is 30.0+/-0.8 dB and noise temperature is 1.5 K. The total DC power consumption of the amplifier is 6.8 mW.

Nyckelord

Cryogenic low noise amplifier; HEMT; InP; noise temperature; LNA

Referenser

[1] J.J.Bautista; J.G. Bowen; N.E. Fernandez; Z. Fujiwara; J. Loreman; S. Petty; J.L. Prater; R. Grunbacher; R. Lai; M. Nishimoto; M.R. Murti; J. Laskar; “Cryogenic; X-bandand Ka-band InP HEMT based LNAs for the Deep Space Network”; Aerospace Conference; 2001; IEEE Proceedings. ; Volume: 2 ; 2001 pp. 2/829 -2/842 vol.2

[2] S. Weinreb; R. Lai; N. Erickson; T. Gaier; J. Wielgus; ”W-band InP wideband MMIC LNA with 30 K noisetemperature”; Microwave Symposium Digest; 1999 IEEE MTT-S International ; Volume: 1 ; 1999 pp. 101-104 vol.1

[3] M. W. Pospieszalski; and E. J. Wollack; “Ultra-low-noise; InP field effect transistor radio astronomy receivers: stateof- the-art”; Microwaves; Radar and WirelessCommunications. 2000. MIKON-2000. 13th International Conference on ; Volume: 3 ; 2000 Page(s): 23 -32 vol.3

[4] M.W. Pospieszalski; W.J. Lakatosh;; Lai; R.; Tan; K.L.;Streit; D.C.; Liu; P.H.; Dia; R.M.; Velebir; J.; “Millimeter-wave; cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs”; Microwave Symposium Digest; 1993.; IEEE MTT-S International ; 1993 Page(s): 515 -518 vol.2

[5] R. Lai et al. "A High Volume 0.1 um InP HEMTProduction Process for Applications from 2 GHz to 200 GHz"; Proceedings from 1999 GaAs MANTECH Conference; Vancouver; Canada

[6] E. Choumas; M. Nawaz; H. Zirath; E. L. Kollberg;“Research and development of W-band MMICs based on the CTH InP HEMT process”; Proceedings of GHz 2000Symposium; March 13-14; Göteborg; Sweden; pp 189-192; March 2000

[7] N. Rorsman; M. Garcia; C. Karlsson; and H. Zirath; “Accurate small-signal modeling of HFET’s for millimeterwave applications”; IEEE Trans. on Microwave Theory Tech.; vol. 44 No. 3; pp 432 –437; March 1996

[8] I. Angelov; N. Wadefalk; J. Stenarsson; E. L. Kollberg; P. Starski; H. Zirath; “On the performance of low noise low DC power consumption cryogenic amplifiers”; IEEE Trans. on Microwave Theory Tech.; vol. 50; No 6; pp 1480-1486; June 2002

Citeringar i Crossref